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2sc6093.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6093 DESCRIPTION Low saturation voltage Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current- Continuous 5 A C I Base Current- Continuous 2 A B I Collector Current-Pulse 12 A CP Collector Power Dissipation 2 @ T =25 a P W C Collector Power Dissipation 25 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark IN

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