2sc6097.pdf Principales características:
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6097 DESCRIPTION Large current capacitance High-speed switching High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 6.5 V EBO I Collector Current-Continuous 3 A C I Collector Current-Peak 5 A CM I Base Current-Continuous 0.6 A B Collector Power Dissipation 15 @ T =25 C P W C Collector Power Dissipation 0.8 @T =25 a T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registere
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2sc6097.pdf Design, MOSFET, Power
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