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2sd1044.pdf Principales características:

isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CER V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 6 A C I Base Current- Continuous 3 A B Collector Power Dissipation P 60 W C @T =25 C T Junction Temperature 150 j Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon

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