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2sd110.pdf Principales características:

isc Silicon NPN Power Transistor 2SD110 DESCRIPTIONV High Power Dissipation- P = 100W@T = 25 C C High Current Capability- I = 10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 130 V CBO V Collector-Emitter Voltage 110 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current-Continuous 10 A C I Emitter Current-Continuous 10 A E I Base Current-Continuous 3 A B P Collector Power Dissipation @T =25 100 W C C T Junction Temperature 150 J Storage Temperature -65 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD110 ELECTRICAL CHARA

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