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2sd1133.pdf Principales características:

isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 70 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 4 A C I Collector Current-Peak 8 A CM Total Power Dissipation P 40 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -45 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1133 ELECTRICAL CHARA

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