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2sd1230.pdf Principales características:

isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 4A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Complement to Type 2SB913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 110 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 8 A C I Collector Current-Peak 12 A CM Collector Power Dissipation 2.5 @T =25 a P W C Collector Power Dissipation 60 @T =25 C T Junction Temperature 150 j T Storage Temperature Range -55 150 stg 1 isc website www

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