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2sd1296.pdf Principales características:

isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 100 V CEO V Collector-Emitter Voltage 80 V CEO(SUS) V Emitter-Base Voltage 8 V EBO I Collector Current-Continuous 15 A C I Collector Current-Peak 30 A CM I Base Current- Continuous 1.5 A B Collector Power Dissipation 100 @T =25 C P W C Collector Power Dissipation 3.0 @T =25 a T Junc

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