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2sd1602.pdf Principales características:

isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1102 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 4 A C I Collector Current-Peak 8 A CP Collector Power Dissipation P 40 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1602 ELECTRIC

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