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2sj529s.pdf Principales características:

2sj529s2sj529s

INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ529S FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -60 V DSS V Gate-Source Voltage 20 V GSS I Drain Current-Continuous -10 A D I Drain Current-Single Pulsed -40 A DM P Total Dissipation 20 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.2 /W Rth(ch-a) Channel-to-ambient thermal resistance 50 1 isc website www.iscsemi.cn isc

 

Keywords - ALL TRANSISTORS. Principales características

 2sj529s.pdf Design, MOSFET, Power

 2sj529s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj529s.pdf Database, Innovation, IC, Electricity

 

 
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