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2sk1476.pdf Principales características:

isc N-Channel MOSFET Transistor 2SK1476 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V Drain-Source Voltage (V =0) 450 V DSS GS V Gate-Source Voltage 30 V GS I Drain Current-continuous@ TC=25 12 A D P Total Dissipation@TC=25 150 W tot T Max. Operating Junction Temperature 150 j T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1476 ELECTRICAL CHARACTERISTICS (T =25 )

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