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3dd200.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD200 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 30 120(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 3A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 3 A C P Collector Power Dissipation@T =75 30 W C C T Junction Temperature 150 J T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.5 /W R th j-c 1 isc website

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