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3dd201.pdf Principales características:

isc Silicon NPN Power Transistor 3DD201 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 40 120(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 350 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 8 A C P Collector Power Dissipation@T =25 50 W C C T Junction Temperature 150 J T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.5 /W R th j-c 1 isc website isc & iscsemi is registe

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