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3dd207.pdf Principales características:

3dd2073dd207

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD207 DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 5 A C P Total Power Dissipation@T =75 50 W D C T Max.Junction Temperature 150 J T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.5 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is

 

Keywords - ALL TRANSISTORS. Principales características

 3dd207.pdf Design, MOSFET, Power

 3dd207.pdf RoHS Compliant, Service, Triacs, Semiconductor

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