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3dd209l.pdf Principales características:

isc Silicon NPN Power Transistor 3DD209L DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current-Continuous 12 A C P Collector Power Dissipation@T =25 120 W C C T Junction Temperature 150 J T Storage Temperature -55 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 3DD209L ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER

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