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ipb054n06n3.pdf Principales características:

ipb054n06n3ipb054n06n3

Isc N-Channel MOSFET Transistor IPB054N06N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 20 V GSS Drain Current-ContinuousTc=25 80 I A D 75 Tc=100 I Drain Current-Single Pulsed 320 A DM P Total Dissipation @T =25 115 W D C T Max. Operating Junction Temperature 175 ch Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.3 /W Rth(ch-a) Channel-to-ambient thermal resistance 62 1 isc website www.iscsemi.cn isc & isc

 

Keywords - ALL TRANSISTORS. Principales características

 ipb054n06n3.pdf Design, MOSFET, Power

 ipb054n06n3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipb054n06n3.pdf Database, Innovation, IC, Electricity

 

 
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