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ipb054n08n3g.pdf Principales características:

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Isc N-Channel MOSFET Transistor IPB054N08N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80 V DSS V Gate-Source Voltage 20 V GSS Drain Current-ContinuousTc=25 I 80 A D Tc=100 I Drain Current-Single Pulsed 320 A DM P Total Dissipation @T =25 150 W D C T Max. Operating Junction Temperature 175 ch Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1 /W Rth(ch-a) Channel-to-ambient thermal resistance 40 1 isc website www.iscsemi.cn isc & iscsemi i

 

Keywords - ALL TRANSISTORS. Principales características

 ipb054n08n3g.pdf Design, MOSFET, Power

 ipb054n08n3g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipb054n08n3g.pdf Database, Innovation, IC, Electricity

 

 
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