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buz103s.pdf Principales características:

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BUZ 103S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.036 RDS(on) Enhancement mode Continuous drain current 31 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ103S P-TO220-3-1 Q67040-S4009-A2 Tube BUZ103S E3045A P-TO263-3-2 Q67040-S4009-A6 Tape and Reel BUZ103S E3045 P-TO263-3-2 Q67040-S4009-A5 Tube Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Value Unit Continuous drain current A ID TC = 25 C 31 TC = 100 C 22 Pulsed drain current 124 IDpulse TC = 25 C Avalanche energy, single pulse 140 mJ EAS ID =31A, VDD =25V, RGS =25 7.5 Avalanche energy, periodic limited by Tjmax EAR 6 kV/ s Reverse diode dv/dt dv/dt IS =31A, VDS =40V, di/dt

 

Keywords - ALL TRANSISTORS. Principales características

 buz103s.pdf Design, MOSFET, Power

 buz103s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz103s.pdf Database, Innovation, IC, Electricity

 

 
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