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buz103sl.pdf Principales características:

BUZ 103SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.026 RDS(on) Enhancement mode Continuous drain current 28 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ103SL P-TO220-3-1 Q67040-S4008-A2 Tube BUZ103SL E3045A P-TO263-3-2 Q67040-S4008-A6 Tape and Reel BUZ103SL E3045 P-TO263-3-2 Q67040-S4008-A5 Tube Maximum Ratings, at Tj = 25 C unless otherwise specified Parameter Symbol Value Unit Continuous drain current A ID TC = 25 C 28 TC = 100 C 20 Pulsed drain current 112 IDpulse TC = 25 C Avalanche energy, single pulse 140 mJ EAS ID =28A, VDD =25V, RGS =25 7.5 Avalanche energy, periodic limited by Tjmax EAR 6 kV/ s Reverse diode dv/dt dv/dt I

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