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ipb057n06n.pdf Principales características:

ipb057n06nipb057n06n

Type IPB057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 5.7 mW 100% avalanche tested ID 45 A Superior thermal resistance Qoss 32 nC N-channel, normal level Qg(0V..10V) 27 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 PG-TO263-3 Type Package Marking IPB057N06N PG-TO263-3 057N06N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25 C Continuous drain current 45 A D GS C V =10 V, T =100 C 45 GS C V =10 V, T =25 C, GS C 17 R =50K/W thJA I T =25 C 180 Pulsed drain current2) D,pulse C I =45 A, R =25 W 60 mJ Avalanche energy, single pulse3) E AS D GS V Gate source voltage 20 V GS 1

 

Keywords - ALL TRANSISTORS. Principales características

 ipb057n06n.pdf Design, MOSFET, Power

 ipb057n06n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipb057n06n.pdf Database, Innovation, IC, Electricity

 

 

 


 
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