ipb05n03la.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ipb05n03la.pdf Principales características:

IPB05N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 4.6 m DS(on),max Qualified according to JEDEC1) for target application I 80 A D N-channel - Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TO263 Superior thermal resistance 175 C operating temperature dv /dt rated Pb-free lead plating; RoHS compliant Type Package Marking IPB05N03LA G PG-TO263 05N03LA Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 C2) 80 A D C T =100 C 76 C I Pulsed drain current T =25 C3) 385 D,pulse C E Avalanche energy, single pulse I =72 A, R =25 190 mJ AS D GS I =80 A, V =20 V, D DS Reverse diode dv /dt dv /d