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ipb05n03lbg.pdf Principales características:

ipb05n03lbgipb05n03lbg

IPB05N03LB OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Ideal for high-frequency dc/dc converters R 5.0 m DS(on),max Qualified according to JEDEC1) for target application I 80 A D N-channel - Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TO220-3-1 PG-TO263-3 Superior thermal resistance 175 C operating temperature dv /dt rated Pb-free lead plating; RoHS compliant Type Package Marking IPB05N03LB PG-TO263-3 05N03LB Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 C2) 80 A D C T =100 C 72 C I Pulsed drain current T =25 C3) 320 D,pulse C E Avalanche energy, single pulse I =80 A, R =25 136 mJ AS D GS I =80 A, V =20 V, D DS Reverse diode dv /dt dv /d

 

Keywords - ALL TRANSISTORS. Principales características

 ipb05n03lbg.pdf Design, MOSFET, Power

 ipb05n03lbg.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipb05n03lbg.pdf Database, Innovation, IC, Electricity

 

 
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