ipp052n08n5.pdf Principales características:

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP052N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 80 V DS Gate Pin 1 R 5.2 m DS(on),max Source Pin 3 I 80 A D Q 51 nC oss Q (0V..10V) 42 nC G Type / Ordering Code Package Marking Related Links IPP052N08N5 PG-TO220-3 052N08N5 - 1) J-STD2

 

Keywords - ALL TRANSISTORS. Principales características

 ipp052n08n5.pdf Design, MOSFET, Power

 ipp052n08n5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipp052n08n5.pdf Database, Innovation, IC, Electricity