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ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Principales características:

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G Package PG-TO220-3 PG-TO262-3 PG-TO263-3 Marking 057N08N 057N08N 054N08N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 C2) 80 A D C T =100 C 80 C I T =25 C 320 Pulsed drain current2) D,pulse C E Avalanche energy

Keywords - ALL TRANSISTORS. Principales características

 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Design, MOSFET, Power

 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Database, Innovation, IC, Electricity