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ipp060n06n.pdf Principales características:

ipp060n06nipp060n06n

Type IPP060N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 6.0 mW Superior thermal resistance ID 45 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 PG-TO220-3 Type Package Marking IPP060N06N PG-TO220-3 060N06N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25 C Continuous drain current 45 A D GS C V =10 V, T =100 C 45 GS C V =10 V, T =25 C, GS C 17 R =50K/W thJA I T =25 C 180 Pulsed drain current2) D,pulse C I =45 A, R =25 W 60 mJ Avalanche energy, single pulse3) E AS D GS V Gate source voltage 20 V GS

 

Keywords - ALL TRANSISTORS. Principales características

 ipp060n06n.pdf Design, MOSFET, Power

 ipp060n06n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipp060n06n.pdf Database, Innovation, IC, Electricity

 

 
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