Todos los transistores

 

ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Principales características:

ipp100n04s4-h2_ipb100n04s4-h2_ipi100n04s4-h2ipp100n04s4-h2_ipb100n04s4-h2_ipi100n04s4-h2

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB100N04S4-02 PG-TO263-3-2 4N04H2 IPI100N04S4-02 PG-TO262-3-1 4N04H2 IPP100N04S4-02 PG-TO220-3-1 4N04H2 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10V 100 A Continuous drain current1) D C GS T =100 C, V =10V2) 100 C GS I T =25 C 400 Pulsed drain current2) D,pulse C I =50A 280 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 100 A AS V - Gate source volt

 

Keywords - ALL TRANSISTORS. Principales características

 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Design, MOSFET, Power

 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Database, Innovation, IC, Electricity

 

 

 


 
↑ Back to Top
.