auirf5210s.pdf Principales características:
AUTOMOTIVE GRADE AUIRF5210S Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175 C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Description S Specifically designed for Automotive applications, D G this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve D2Pak low on-resistance per silicon area. This benefit AUIRF5210S combined with the fast switching speed and ruggedized device design that HEXFET power GDS MOSFETs are well known for, provides the Gate Drain Source designer with an extremely efficient and reliable device for use in Automotive and a wide variety of oth
Keywords - ALL TRANSISTORS. Principales características
auirf5210s.pdf Design, MOSFET, Power
auirf5210s.pdf RoHS Compliant, Service, Triacs, Semiconductor
auirf5210s.pdf Database, Innovation, IC, Electricity
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