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PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to Tjmax Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET Power MOSFET utilizes the latest pro- cessing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 C junction operating temperature, low R JC, fast switch- ing speed and improved repetitive avalanche rating. This combina- tion makes the design an extremely efficient and reliable choice for D2Pak TO-262 use i

 

Keywords - ALL TRANSISTORS. Principales características

 irf3808l.pdf Design, MOSFET, Power

 irf3808l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3808l.pdf Database, Innovation, IC, Electricity

 

 
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