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irfr13n15dpbf.pdf Principales características:

irfr13n15dpbfirfr13n15dpbf

PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR13N15D IRFU13N15D Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 9.8 A IDM Pulsed Drain Current 56 PD @TC = 25 C Power Dissipation 86 W Linear Derating Factor 0.57 W/ C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 3.8 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range C Soldering Temperature, for 10

 

Keywords - ALL TRANSISTORS. Principales características

 irfr13n15dpbf.pdf Design, MOSFET, Power

 irfr13n15dpbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfr13n15dpbf.pdf Database, Innovation, IC, Electricity

 

 
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