Todos los transistores

 

irfz48n 1.pdf Principales características:

irfz48n_1irfz48n_1

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state resistance Ptot Total power dissipation 140 W and has integral zener diodes giving Tj Junction temperature 175 C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 16 m intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maxi

 

Keywords - ALL TRANSISTORS. Principales características

 irfz48n 1.pdf Design, MOSFET, Power

 irfz48n 1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfz48n 1.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.