irg4ph50kd.pdf Principales características:
PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 2.77V Combines low conduction losses with high G switching speed @VGE = 15V, IC = 24A Tighter parameter distribution and higher efficiency E than previous generations n-channel IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Benefits Latest generation 4 IGBT's offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGPH50KD2 and IRGPH50MD2
Keywords - ALL TRANSISTORS. Principales características
irg4ph50kd.pdf Design, MOSFET, Power
irg4ph50kd.pdf RoHS Compliant, Service, Triacs, Semiconductor
irg4ph50kd.pdf Database, Innovation, IC, Electricity
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