irh9250.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irh9250.pdf Principales características:

PD-91392D RADIATION HARDENED IRH9250 POWER MOSFET 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY THRU-HOLE (T0-204AE) Product Summary Part Number Radiation Level RDS(on) ID IRH9250 100K Rads (Si) 0.315 -14A IRH93250 300K Rads (Si) 0.315 -14A International Rectifier s RADHard HEXFET TO-204AE technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and Features reliability in satellite applications. These devices n Single Event Effect (SEE) Hardened have been characterized for both Total Dose and n Low RDS(on) Single Event Effects (SEE). The combination of n Low Total Gate Charge low Rdson and low gate charge reduces the power n Proton Tolerant losses in switching applications such as DC to DC n Simple Drive Requirements converters and motor control. These devices retain n