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hrfz44n.pdf Principales características:

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HRFZ44N Data Sheet June 1999 File Number 4752 49A, 55V, 0.022 Ohm, N-Channel UltraFET Features Power MOSFET 49A, 55V This N-Channel power MOSFET is Simulation Models manufactured using the innovative - Temperature Compensated PSPICE and SABER UltraFET process. This advanced Electrical Models process technology achieves the - Spice and Saber Thermal Impedance Models lowest possible on-resistance per silicon area, resulting in - www.semi.Intersil.com/families/models.htm outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Peak Current vs Pulse Width Curve diode exhibits very low reverse recovery time and stored UIS Rating Curve charge. It was designed for use in applications where power Related Literature efficiency is important, such as switching regulators, - TB334, Guidelines for

 

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