gmm3x120-0075x2-smd.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

gmm3x120-0075x2-smd.pdf Principales características:

GMM 3x120-0075X2 VDSS = 75 V Three phase full Bridge ID25 = 110 A with Trench MOSFETs RDSon typ. = 4.0 mW in DCB isolated high current package L1+ L2+ L3+ G1 G3 G5 S1 S3 S5 L1 L2 L3 G2 G4 G6 S2 S4 S6 L1- L2- L3- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TVJ = 25 C to 150 C 75 V - electric power steering VGS 20 V - starter generator in industrial vehicles ID25 TC = 25 C 110 A - propulsion drives ID90 TC = 90 C 85 A - fork lift drives in battery supplied equipment IF25 TC = 25 C (diode) 110 A IF90 TC = 90 C (diode) 80 A Features MOSFETs in trench technology Symbol Conditions Characteristic Values - low RDSon (TVJ = 25 C, unless otherwise specified) - optimized intrinsic reverse diode min. typ. max. package - high level of integration RDSon 1) on chip level at TVJ =