gmm3x160-0055x2-smd.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

gmm3x160-0055x2-smd.pdf Principales características:

GMM 3x160-0055X2 VDSS = 55 V Three phase full Bridge ID25 = 150 A with Trench MOSFETs RDSon typ. = 2.2 mW in DCB isolated high current package L1+ L2+ L3+ G1 G3 G5 S1 S3 S5 L1 L2 L3 G2 G4 G6 S2 S4 S6 L1- L2- L3- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TVJ = 25 C to 150 C 55 V - electric power steering VGS 20 V - starter generator in industrial vehicles ID25 TC = 25 C 150 A - propulsion drives ID90 TC = 90 C 115 A - fork lift drives in battery supplied equipment IF25 TC = 25 C (diode) 140 A IF90 TC = 90 C (diode) 90 A Features MOSFETs in trench technology Symbol Conditions Characteristic Values - low RDSon (TVJ = 25 C, unless otherwise specified) - optimized intrinsic reverse diode min. typ. max. package - high level of integration RDSon 1) on chip level at TVJ =