gwm100-01x1-smd.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

gwm100-01x1-smd.pdf Principales características:

GWM 100-01X1 VDSS = 100 V Three phase full Bridge ID25 = 90 A with Trench MOSFETs RDSon typ. = 7.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 100 V - electric power steering VGS 20 V - starter generator in industrial vehicles ID25 TC = 25 C 90 A - propulsion drives ID90 TC = 90 C 68 A - fork lift drives in battery supplied equipment IF25 TC = 25 C (diode) 90 A IF90 TC = 90 C (diode) 68 A Features MOSFETs in trench technology Symbol Conditions Characteristic Values - low RDSon (TJ = 25 C, unless otherwise specified) - optimized intrinsic reverse diode min. typ. max. package - high level of integration RDSon 1) on ch