ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf Principales características:

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 RDS(on) 360m IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V G D D (Tab) S ID25 TC = 25 C16 A TO-247 (IXFH) IDM TC = 25 C, Pulse Width Limited by TJM 40 A IA TC = 25 C8 A EAS TC = 25 C 300 mJ dv/dt IS IDM, VDD VDSS, TJ 150 C 35 V/ns G D D (Tab) PD TC = 25 C 330 W S TJ -55 ... +150 C G = Gate D = Drain TJM 150 C S = Source Tab = Drain Tstg -55 ... +150 C TL 1.6mm (0.062) from Case for 10s 300 C Features TSOLD Plastic Body for 10s 260 C F