ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Principales características:

ixfa16n60p3_ixfh16n60p3_ixfp16n60p3ixfa16n60p3_ixfh16n60p3_ixfp16n60p3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 RDS(on) 440m IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C, RGS = 1M 600 V VGSS Continuous 30 V G D D (Tab) VGSM Transient 40 V S ID25 TC = 25 C16 A TO-247 (IXFH) IDM TC = 25 C, Pulse Width Limited by TJM 40 A IA TC = 25 C8 A EAS TC = 25 C 800 mJ G dv/dt IS IDM, VDD VDSS, TJ 150 C 35 V/ns D D (Tab) S PD TC = 25 C 347 W TJ -55 ... +150 C G = Gate D = Drain TJM 150 C S = Source Tab = Drain Tstg -55 ... +150 C TL 1.6mm (0.062) from Case for 10s 300 C Features TSOLD Plastic Body for 10s 260 C M

 

Keywords - ALL TRANSISTORS. Principales características

 ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Design, MOSFET, Power

 ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Database, Innovation, IC, Electricity