ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf Principales características:
Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 RDS(on) 230m IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D VDGR TJ = 25 C to 150 C, RGS = 1M 500 V S D (Tab) VGSS Continuous 30 V VGSM Transient 40 V TO-247 (IXFH) ID25 TC = 25 C 26 A IDM TC = 25 C, Pulse Width Limited by TJM 78 A IA TC = 25 C13 A G EAS TC = 25 C 300 mJ D S D (Tab) dv/dt IS IDM, VDD VDSS, TJ 150 C 35 V/ns PD TC = 25 C 500 W G = Gate D = Drain S = Source Tab = Drain TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C Fast Intrinsic Rectifier TL
Keywords - ALL TRANSISTORS. Principales características
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf Design, MOSFET, Power
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf RoHS Compliant, Service, Triacs, Semiconductor
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf Database, Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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