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ixfc20n80p ixfr20n80p.pdf datasheet:

ixfc20n80p_ixfr20n80pixfc20n80p_ixfr20n80p

IXFC 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFR 20N80P ID25 = 10 A Power MOSFET RDS(on) 500 m Electrically Isolated Back Surface trr 250 ns N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 800 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Continuous 30 V VGSM Transient 40 V G D Isolated back surface ID25 TC = 25 C11 A S IDM TC = 25 C, pulse width limited by TJM 60 A IAR TC = 25 C10 A ISOPLUS247TM (IXFR) EAR TC = 25 C30 mJ E153432 EAS TC = 25 C 1.0 J dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns TJ 150 C, RG = 3 PD TC = 25 C 166 W Isolated back surface TJ -55 ... +150 C TJM 150 C G = Gate D = Drain Tstg -55 ... +150 C S = Source TL 1.6 mm

 

Keywords - ALL TRANSISTORS DATASHEET

 ixfc20n80p ixfr20n80p.pdf Design, MOSFET, Power

 ixfc20n80p ixfr20n80p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfc20n80p ixfr20n80p.pdf Database, Innovation, IC, Electricity

 

 
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