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ixfh22n60p ixfv22n60p.pdf Principales características:

ixfh22n60p_ixfv22n60pixfh22n60p_ixfv22n60p

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS RDS(on) 350 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V G D (TAB) VGS Continuous 30 V D S VGSM Tranisent 40 V ID25 TC = 25 C22 A IDM TC = 25 C, pulse width limited by TJM 66 A PLUS220 (IXFV) IAR TC = 25 C22 A EAR TC = 25 C40 mJ EAS TC = 25 C 1.0 J G DS D (TAB) dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS 20 V/ns TJ 150 C, RG = 4 PD TC = 25 C 400 W PLUS220SMD (IXFV...S) TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TL 1.6 mm (0.062 in.) from case for 10 s 300 C G TSOLD Plastic body fo

 

Keywords - ALL TRANSISTORS. Principales características

 ixfh22n60p ixfv22n60p.pdf Design, MOSFET, Power

 ixfh22n60p ixfv22n60p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfh22n60p ixfv22n60p.pdf Database, Innovation, IC, Electricity

 

 
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