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ixfr180n15p.pdf Principales características:

ixfr180n15pixfr180n15p

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 13 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VGSS Continuous 20 V VGSM Transient 30 V G D ISOLATED TAB ID25 TC = 25 C 100 A S ID(RMS) External Lead current limit 75 A G = Gate D = Drain IDM TC = 25 C, pulse width limited by TJM 380 A S = Source IAR TC = 25 C60 A EAR TC = 25 C 100 mJ EAS TC = 25 C4 J Features dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns l TJ 150 C, RG = 4 International standard isolated package PD TC = 25 C 300 W l UL recog

 

Keywords - ALL TRANSISTORS. Principales características

 ixfr180n15p.pdf Design, MOSFET, Power

 ixfr180n15p.pdf RoHS Compliant, Service, Triacs, Semiconductor

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