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ixfr24n100q3.pdf Principales características:

Advance Technical Information HiperFETTM VDSS = 1000V IXFR24N100Q3 Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 30 V G VGSM Transient 40 V Isolated Tab D S ID25 TC = 25 C 18 A IDM TC = 25 C, Pulse Width Limited by TJM 60 A G = Gate D = Drain IA TC = 25 C 24 A S = Source EAS TC = 25 C2 J dv/dt IS IDM, VDD VDSS, TJ 150 C 50 V/ns PD TC = 25 C 500 W Features TJ -55 ... +150 C TJM 150 C Silicon Chip on Direct-Copper Bond Tstg -55 ... +150 C (DCB) Substrate Isolated Mounting Surface TL 1.6mm (0.062 in.) from Case for 10s 30

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 ixfr24n100q3.pdf Design, MOSFET, Power

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