ixga7n60c ixgp7n60c.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ixga7n60c ixgp7n60c.pdf Principales características:

VCES = 600 V IXGA 7N60C HiPerFASTTM IGBT IC25 = 14 A IXGP 7N60C LightspeedTM Series VCE(sat) = 2.7 V tfi = 45 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25 C 14 A IC90 TC = 90 C 7 A ICM TC = 25 C, 1 ms 30 A G C (TAB) SSOA VGE = 15 V, TVJ = 125 C, RG = 22 ICM = 14 A E (RBSOA) Clamped inductive load, L = 300 H @ 0.8 VCES PC TC = 25 C 54 W TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Maximum lead temperature for soldering 300 C Features 1.6 mm (0.062 in.) from case for 10 s International standard packages Md Mounting torque, (TO-220) M3 0.45/4 Nm/lb.in. JEDEC TO-263 surface 0.55/5 Nm/lb.in. M3.5 mountable a