ixga8n100.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ixga8n100.pdf Principales características:

IXGA 8N100 VCES = 1000 V IGBT IXGP 8N100 IC25 = 16 A VCE(sat) = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C16 A IC90 TC = 90 C8 A ICM TC = 25 C, 1 ms 32 A TO-263 AA (IXGA) SSOA VGE = 15 V, TVJ = 125 C, RG = 120 ICM = 16 A (RBSOA) Clamped inductive load @ 0.8 VCES G C (TAB) E PC TC = 25 C54 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features Maximum lead temperature for soldering 300 C International standard packages 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-220AB and TO-263AA Md Mounting torque with screw M3 0.45/4 Nm/lb.in. Low VCE(sat) Mounting torque with screw M3.5 0.55/5 Nm/lb.in. - for minimum on-state conduction Weight TO-2