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ixgh39n60bd1.pdf Principales características:

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C76 A IC90 TC = 90 C39 A ICM TC = 25 C, 1 ms 152 A C (TAB) G C SSOA VGE = 15 V, TVJ = 125 C, RG = 22 ICM = 76 A E (RBSOA) Clamped inductive load @ 0.8 VCES G = Gate, C = Collector, E = Emitter, TAB = Collector PC TC = 25 C 200 W TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C International standard packages Maximum lead temperature for soldering 300 C JEDEC TO-247 AD & TO-268 1.6 mm (0.062 in.) from case for 10 s High current handling capability Newest gener

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 ixgh39n60bd1.pdf Design, MOSFET, Power

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