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ixgh64n60a3.pdf Principales características:

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Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to VCE(sat) 1.35V 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C IC110 TC = 110 C 64 A E ICM TC = 25 C, 1ms 400 A SSOA VGE = 15V, TVJ = 125 C, RG = 3 ICM = 100 A TO-268 (IXGT) (RBSOA) Clamped inductive load @ 600V PC TC = 25 C 460 W G E TJ -55 ... +150 C TJM C C (TAB) 150 Tstg -55 ... +150 C G = Gate C = Collector TL 1.6mm (0.062 in.) from case for 10s 300 C E = Emitter TAB = Collector TSOLD Plastic body for 10 seconds C 260 Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Features Weight TO-247 6 g TO-268 5 g Optimized fo

 

Keywords - ALL TRANSISTORS. Principales características

 ixgh64n60a3.pdf Design, MOSFET, Power

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