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ixgn50n120c3h1.pdf Principales características:

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Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN50N120C3H1 IC110 = 50A IGBT w/ Diode VCE(sat) 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 95 A C IC110 TC = 110 C 50 A IF110 TC = 110 C 58 A G = Gate, C = Collector, E = Emitter either emitter terminal can be used as ICM TC = 25 C, 1ms 240 A Main or Kelvin Emitter SSOA VGE= 15V, TVJ = 125 C, RG = 2 ICM = 100 A (RBSOA) Clamped Inductive Load VCE VCES PC TC = 25 C 460 W Features TJ -55 ... +150 C Optimized for Low Switching Losses TJM 150 C Square RBSOA Tstg -55 ... +150 C High Current Capability VISOL 50/60Hz t = 1min 250

 

Keywords - ALL TRANSISTORS. Principales características

 ixgn50n120c3h1.pdf Design, MOSFET, Power

 ixgn50n120c3h1.pdf RoHS Compliant, Service, Triacs, Semiconductor

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