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ixgn50n60b.pdf Principales características:

ixgn50n60bixgn50n60b

HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.3 V tfi(typ) = 120ns Preliminary data sheet E Symbol Test Conditions Maximum Ratings SOT-227B miniBLOC E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C75 A C IC90 TC = 90 C50 A G = Gate, C = Collector, E = Emitter ICM TC = 25 C, 1 ms 200 A Either emitter terminal can be used as Main or Kelvin Emitter SSOA VGE = 15 V, TVJ = 125 C, RG = 10 ICM = 100 A (RBSOA) Clamped inductive load, L = 30 H @ 0.8 VCES PC TC = 25 C 300 W Features TJ -55 ... +150 C International standard package SOT-227B TJM 150 C Aluminium nitride isolation Tstg -55 ... +150 C - high power dissipation Isolation voltage 3000 V Md Mounting torque 1.5/13 Nm/lb.in. Terminal connection

 

Keywords - ALL TRANSISTORS. Principales características

 ixgn50n60b.pdf Design, MOSFET, Power

 ixgn50n60b.pdf RoHS Compliant, Service, Triacs, Semiconductor

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