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ixgn72n60c3h1.pdf Principales características:

GenX3TM 600V IGBT VCES = 600V IXGN72N60C3H1 with Diode IC110 = 52A VCE(sat) 2.50V tfi(typ) = 55ns High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 78 A C IC110 TC = 110 C 52 A G = Gate, C = Collector, E = Emitter ICM TC = 25 C, 1ms 360 A either emitter terminal can be used as IA TC = 25 C50 A Main or Kelvin Emitter EAS TC = 25 C 500 mJ SSOA VGE= 15V, TVJ = 125 C, RG = 2 ICM = 150 A Features (RBSOA) Clamped Inductive Load @ VCE VCES PC TC = 25 C 360 W Optimized for Low Switching Losses Square RBSOA TJ -55 ... +150 C Aluminium Nitride Isolation TJM 150 C - High Power Dissipation Tstg -5

Keywords - ALL TRANSISTORS. Principales características

 ixgn72n60c3h1.pdf Design, MOSFET, Power

 ixgn72n60c3h1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgn72n60c3h1.pdf Database, Innovation, IC, Electricity