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ixgr32n170h1.pdf Principales características:

IXGR 32N170H1 VCES = 1700 V High Voltage IC25 = 38 A IGBT with Diode VCE(sat) = 3.5 V Electrically Isolated Tab tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C ISOLATED TAB E IC25 TC = 25 C38 A G = Gate, C = Collector, IC90 TC = 90 C20 A E = Emitter IF90 14 A ICM TC = 25 C, 1 ms 200 A SSOA VGE = 15 V, TVJ = 125 C, RG = 5 ICM = 70 A (RBSOA) Clamped inductive load @ 0.8 VCES Features tSC TJ = 125 C, VCE = 1200 V; VGE = 15 V, RG = 10 10 s Electrically Isolated tab High current handling capability PC TC = 25 C 200 W MOS Gate turn-on TJ -55 ... +150 C - drive simplicity Rugged NPT structure TJM 150 C Molding epoxies meet UL 94 V-0 Tstg -55

Keywords - ALL TRANSISTORS. Principales características

 ixgr32n170h1.pdf Design, MOSFET, Power

 ixgr32n170h1.pdf RoHS Compliant, Service, Triacs, Semiconductor

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